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| GaAs Varactor Diodes TM (R) Abrupt Junction MV20001 - MV21010 Features High Q Values for Higher Frequency Performance Constant Gamma Design Low Reverse Current Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications VCOs Phase-Locked Oscillators High Q Tunable Filters Phase Shifters Pre-Selectors Description Microsemi's GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies. Breakdown Voltage 50 mA @ 25C +20 dBm @ 25C -55C to +175C -55C to +200C Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The MV20000 Series of products are supplied with a RoHS complaint Gold finish. Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GaAs Varactor Diodes TM (R) Abrupt Junction MV20001 - MV21010 Specifications @ 25C Gamma = 0.5 Part Number MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 MV20010 MV21001 MV21002 MV21003 MV21004 MV21005 MV21006 MV21007 MV21008 MV21009 MV21010 1 2 CT @ 4 V 10% (pF)1, 3, 4 0.3 0.4 0.5 0.6 0.8 1.0 1.2 1.5 1.8 2.2 0.3 0.4 0.5 0.6 0.8 1.0 1.2 1.5 1.8 2.2 Typ. CT @ 0 V CT @ VBR5 2.4 2.6 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.4 2.8 3.1 3.4 3.6 3.8 4.0 4.2 4.3 4.5 4.6 Min. VBR @ 10 A (V) 15 15 15 15 15 15 15 15 15 15 30 30 30 30 30 30 30 30 30 30 Typ. Q @ -4 V2 8000 7500 7000 6500 6000 5700 5000 5000 5000 4000 8000 7500 7000 6500 6000 5700 5000 5000 5000 4000 Typical Characteristics Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. 3 Tightened tolerances available upon request. 4 Package capacitance of 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon package selection. Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 |
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